Power Transistor IRF540N N-Channel, 33A TO-220AB

Power Transistor IRF540N N-Channel, 33A TO-220AB

Power Transistor IRF540N N-Channel, 33A TO-220AB

Power Transistor IRF540N N-Channel, 33A TO-220AB

Power Transistor IRF540N N-Channel, 33A TO-220AB

Transistors

Reference: TRIRF540

Part.No: IRF540N

€1.95

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The IRF540N is a high-performance N-Channel Power MOSFET in TO-220AB package. Designed for demanding switching and linear applications with extremely low on-resistance (RDS(on)), ideal for motor control, power supplies, and high-current DC switching.

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Description
Product Details

IRF540N Power MOSFET - High-Current N-Channel for Industrial & Power Applications

The IRF540N is an N-Channel Power MOSFET engineered for high-current switching and amplification in demanding power circuits. With a maximum drain current of 33A and drain-source voltage rating of 100V, it delivers superior efficiency through exceptionally low on-resistance, making it the preferred choice for motor drives, industrial controllers, and renewable energy systems.

Functions & Applications

Extreme Low On-Resistance (RDS(on)): Minimizes power loss and heat generation during continuous operation.
High Current Rating (33A): Capable of driving powerful motors, pumps, and industrial loads.
Robust 100V Rating: Handles supply voltages up to 100V with safety margin for transient protection.
TO-220AB Through-Hole Package: Industrial-standard heatsink-mountable package, designed for high-power applications requiring thermal management.
Fast Switching: Suitable for PWM control and high-frequency switching in efficiency-critical designs.

Technical Specifications

Parameter	Value / Specification
Transistor Type	MOSFET (Metal–oxide–semiconductor FET)
Polarity / Channel	N-Channel
Package / Case	TO-220AB
Drain-Source Voltage (VDS)	100V
Max Drain Current (ID)	33A
On-Resistance (RDS(on))	0.077Ω (typical)
Power Dissipation (Pd)	150W
Mounting Type	Through-Hole with Heatsink (THT)

Frequently Asked Questions

Q: Does the IRF540N require a heatsink?
A: Yes, for sustained operation above 10A or in continuous duty cycles, a heatsink is strongly recommended to maintain safe junction temperatures and prevent thermal shutdown.

Q: What gate voltage is required to turn on the IRF540N?
A: The IRF540N is fully enhanced at gate voltages (VGS) of 10V. It can be driven directly from 5V logic signals, though operation may be slightly sub-optimal; 10V is preferred for full current capability.

Notes

Requires adequate heatsinking for continuous high-current operation. Always use a snubber diode (e.g. 1N4007) across inductive loads (motors, relays) to protect the drain-source junction from voltage spikes.

Note: Price refers to one (1) piece. The component is shipped in bulk without individual packaging.

Transistor Type: MOSFET (Metal–oxide–semiconductor FET)
Transistor Polarity / Channel: N-Channel
Transistor Case Style: TO-220
TO-220AB

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