Dual-Gate MOSFET BF961 N-Channel TO-50

Dual-Gate MOSFET BF961 N-Channel TO-50

Transistors

Reference: TRBF961

Part.No: BF961

€1.20

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The BF961 is a Dual-Gate N-Channel MOSFET in a TO-50 package, designed for VHF/UHF RF applications. Gate 1 accepts the input signal while Gate 2 enables automatic gain control (AGC), making it ideal for radio amateur receivers and mixer circuits.

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Description
Product Details

BF961 Dual-Gate MOSFET - Premium RF Amplifier & Mixer for HAM Radio

The BF961 is a specialized Dual-Gate N-Channel MOSFET engineered for low-noise VHF and UHF reception. Its unique dual-gate architecture allows independent control of signal gain through separate input (G1) and gain-control (G2) terminals, making it the preferred choice for AGC-equipped RF preamplifiers and single-sideband (SSB) mixers in amateur radio stations.

Functions & Applications

Dual-Gate Architecture: Gate 1 (G1) for signal input, Gate 2 (G2) for voltage-controlled gain (AGC regulation).
Extremely Low Noise Figure: Optimized for sensitive RF receiver front-ends and preamplifier stages.
High VHF/UHF Gain: Excellent small-signal performance across 144–430 MHz amateur bands.
ESD-Protected Gates: Internal protection diodes, though ESD handling precautions remain essential during assembly.
Industrial TO-50 Package: Hermetically sealed, suitable for high-reliability RF applications.

Technical Specifications

Parameter	Value / Specification
Transistor Type	MOSFET (Metal–oxide–semiconductor FET)
Polarity / Channel	N-Channel
Package / Case	TO-50
Package Type	TO-50 (Hermetic, 6-pin)
Gate Architecture	Dual-Gate (G1 signal, G2 AGC control)
Mounting Type	Through-Hole (THT)

Frequently Asked Questions

Q: What is the difference between G1 and G2 on the BF961?
A: G1 is the main signal input gate; G2 is the gain-control gate. By varying the voltage on G2, you adjust the amplifier's gain without changing the input signal, enabling automatic gain control (AGC) in receiver designs.

Q: Is the BF961 suitable for VHF/UHF amateur radio use?
A: Yes, it is specifically designed for HAM radio applications. Its low noise figure and high gain make it ideal for 2m (144 MHz) and 70cm (430 MHz) band preamplifiers and mixers.

Notes

Gate terminals (G1 and G2) are ESD-sensitive. Use proper antistatic precautions during installation: ground your soldering iron, wear an ESD wrist strap, and store in antistatic packaging when not in use.

Note: Price refers to one (1) piece. The component is shipped in bulk without individual packaging.

Transistor Type: MOSFET (Metal–oxide–semiconductor FET)
Transistor Polarity / Channel: N-Channel
Transistor Case Style: TO-50

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