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P-Channel MOSFET Transistor IRF9530 -100V 12A...

P-Channel MOSFET Transistor IRF9530 -100V 12A TO-220

IC
TRIRF9530
Part.No: IRF9530
€2.95
In Stock
Immediate Dispatch

The IRF9530 is a P-Channel power MOSFET (-100V, -12A) in a TO-220AB package, with a maximum RDS(on) of 0.30Ω at VGS = -10V and 88W power dissipation. It is used in high-side switches, DC motor control, reverse polarity protection and power supply circuits.

 

P-Channel MOSFET Transistor IRF9530 -100V 12A TO-220

The IRF9530 is a P-Channel power MOSFET with a maximum drain-source voltage of -100V and a continuous drain current of -12A (at 25°C case temperature). The on-state resistance RDS(on) is 0.30Ω maximum at VGS = -10V, and the TO-220AB package allows mounting on a heatsink. As a P-Channel device, it switches the positive rail of the load (high-side switching) without a bootstrap or charge pump circuit.

  • Drain-Source voltage: -100V
  • Continuous drain current: -12A at 25°C, -8.2A at 100°C (case temperature)
  • RDS(on): 0.30Ω max (VGS = -10V, ID = -7.2A)
  • Power dissipation: 88W at 25°C (case)
  • Operating temperature: up to 175°C
  • Features: fast switching, dynamic dV/dt rating, repetitive avalanche rated, easy paralleling, simple gate drive

Typical Applications

  • High-side switch in DC circuits
  • Reverse polarity protection of power inputs
  • DC motor control and H-bridges, combined with N-Channel MOSFETs
  • Complementary (push-pull) pair with an N-Channel MOSFET
  • Load switching in power supplies and battery-powered circuits

Technical Specifications

Type P-Channel power MOSFET
Maximum Drain-Source voltage (VDS) -100V
Maximum Gate-Source voltage (VGS) ±20V
Gate threshold voltage VGS(th) -2.0 to -4.0V
Continuous drain current (ID) -12A (TC = 25°C) / -8.2A (TC = 100°C)
Pulsed drain current (IDM) -48A
RDS(on) (VGS = -10V, ID = -7.2A) 0.30Ω max
Power dissipation (PD, TC = 25°C) 88W
Total gate charge (Qg) 38nC max (VGS = -10V, ID = -12A, VDS = -80V)
Input capacitance (Ciss) 860pF typ. (VDS = -25V, f = 1MHz)
Switching times (typ.) td(on) 12ns, tr 52ns, td(off) 31ns, tf 39ns
Single pulse avalanche energy (EAS) 400mJ
Thermal resistance Junction-Case (RthJC) 1.7°C/W max
Thermal resistance Junction-Ambient (RthJA) 62°C/W max
Operating / storage temperature -55°C to +175°C
Package TO-220AB
Pinout (marked side facing you) Gate – Drain – Source (the metal tab is connected to the Drain)

Frequently Asked Questions

Can I drive the IRF9530 directly from a 3.3V or 5V output?
No. The IRF9530 is not a logic-level device: the gate threshold voltage VGS(th) is -2.0 to -4.0V and the 0.30Ω RDS(on) is specified at VGS = -10V. Because it is a P-Channel device, the gate must be pulled about 10V below the source, so high-side applications driven by a microcontroller need a level shifter, such as a small N-Channel MOSFET or transistor. VGS must never exceed ±20V.

Does it need a heatsink?
For most loads, yes. Without a heatsink the Junction-Ambient thermal resistance is 62°C/W, while the Junction-Case value is 1.7°C/W. For example, at 5A the conduction loss reaches roughly 7.5W (5² × 0.30Ω), and RDS(on) increases as the device heats up.

Is the IRF9530 the same as the IRF9530N?
No. They share the TO-220 package but have different electrical characteristics, for example a maximum RDS(on) of 0.30Ω for the IRF9530 versus 0.20Ω for the IRF9530N. Check both datasheets before substituting one for the other.

Tip: Add a resistor (e.g. 10kΩ) between gate and source so the MOSFET stays off when the driver is not controlling the gate.
Transistor Type
MOSFET (Metal–oxide–semiconductor FET)
Transistor Polarity / Channel
P-Channel
Transistor Case Style
TO-220
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