Transistor BD115 NPN, 180V, 150mA, TO-39

Transistor BD115 NPN, 150mA TO-39

Transistors

Reference: TRBD115

Part.No: BD115

€1.40

In Stock

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The BD115 is a high-voltage NPN Bipolar Junction Transistor (BJT) in a TO-39 metal can package. Designed for driver and switching stages where a high Vceo rating of 180V is required.

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Description
Product Details

BD115 High-Voltage NPN Driver Transistor (TO-39)

The BD115 is an NPN transistor rated for a relatively high collector-emitter voltage of 180V, making it suitable for driver and switching stages in circuits where standard low-voltage small-signal transistors are not adequate. Its TO-39 metal can package offers good heat dissipation for its size compared to plastic TO-92 parts.

Functions & Applications

High Voltage Rating: Vceo of 180V allows use in circuits beyond the reach of common small-signal NPN transistors.
TO-39 Metal Can Package: Better heat dissipation than plastic packages, improving reliability under load.
Driver/Switching Use: Well suited for high-voltage switching and driver stages in legacy and general-purpose circuits.
Through-Hole Mounting: Easy to solder and prototype on breadboards or perfboards.

Technical Specifications

Parameter	Value / Specification
Transistor Type	BJT (Bipolar Junction Transistor)
Polarity / Channel	NPN
Package / Case	TO-39
Collector-Emitter Voltage (Vceo)	180V
Max Collector Current (Ic)	150mA
Mounting Type	Through-Hole (THT)

Frequently Asked Questions

Q: What is the complementary PNP part for BD115?
A: The complementary PNP transistor commonly paired with the BD115 is the BD116.

Q: Can the BD115 be used in high-voltage driver circuits?
A: Yes, its 180V Vceo rating makes it suitable for driver and switching stages that exceed the voltage limits of typical small-signal NPN transistors.

Note: Price refers to one (1) piece. The component is shipped in bulk without individual packaging.

Transistor Type: BJT (Bipolar Junction Transistor)
Transistor Polarity / Channel: NPN
Transistor Case Style: TO-39

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